| PART |
Description |
Maker |
| BF998W Q62702-F1586 |
From old datasheet system
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HAT2028R-EL-E HAT2028RJ-EL-E HAT2028R-15 |
4 A, 60 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| CMLDM7002A |
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| NTE2935 NTE2933 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE[NTE Electronics]
|
| H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
Renesas Electronics Corporation.
|
| H5N6001P |
Silicon N-Channel MOSFET High-Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
| RJM0306JSP-00-J0 RJM0306JSP |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HS54097TZ-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N1004LM H7N1004LS |
Silicon N-Channel MOSFET High-Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
|
| H5N2305PF H5N2305PF-E |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6020DPK-00-T0 RJK6020DPK |
Silicon N Channel MOSFET High Speed Power Switching
|
Renesas Electronics Corporation
|
